Minority carrier lifetime determination

[Alsri]

I would like to know if it is possible to measure minority carrier lifetime in 300um silicon detectors that have already been cut from the wafers that were fabricated using a set of photo-masks with layers including phosphorus and boron diffusion, metalization of both sides and passivation? Perhaps it is important to mention here that the resistivity of these detectors in >7 kOhms-cm.

I know from literature that it is possible to determine minority carrier lifetime for silicon blocks and bare wafers. I'm not sure about if it can still be determined of metalized diodes.

Thanks in advance for any advice.

 

[BigJDubs]

Yes, it is possible to measure minority carrier lifetime in 300 um silicon detectors that have already been cut from the wafers. The process involves measuring the surface recombination velocity (SRV) of the detector using a technique called transient capacitance-voltage (CV) profiling. This method involves applying a voltage pulse to the detector and then measuring the time it takes for the voltage to decay. The decay rate is related to the SRV, which in turn is related to the minority carrier lifetime. It is important to note that the SRV will be affected by the metalization and passivation layers. Therefore, it is necessary to use a model to account for the effects of these layers in order to accurately calculate the minority carrier lifetime.