I would like to know if it is possible to measure minority carrier lifetime in 300um silicon detectors that have already been cut from the wafers that were fabricated using a set of photo-masks with layers including phosphorus and boron diffusion, metalization of both sides and passivation? Perhaps it is important to mention here that the resistivity of these detectors in >7 kOhms-cm. I know from literature that it is possible to determine minority carrier lifetime for silicon blocks and bare wafers. I'm not sure about if it can still be determined of metalized diodes. Thanks in advance for any advice.