Hello, I have developed MOS capacities, and I have performed CV measurements over them. In the accumulation region the capacity was: 3,04237•E-10 F and the area of the capacitors is 1,7mm. With that I get that the oxide thickness is 328nm When I know that the real oxide thickness is only 200nm. What can cause that?? I cannot understand. I can understand to get less oxide than real, but ...... more?? I haven't found any information about this, and I'm sure that the measurements are correct, because they showed the same values through the different MOS that I measured (8 in total). I hope someone has any idea. I'm desesperated! Thank you so much!!