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MOS Capacitor: calculated oxide thickness greater than real

  1. Mar 28, 2012 #1

    I have developed MOS capacities, and I have performed CV measurements over them. In the accumulation region the capacity was: 3,04237•E-10 F and the area of the capacitors is 1,7mm. With that I get that the oxide thickness is 328nm When I know that the real oxide thickness is only 200nm. What can cause that?? I cannot understand. I can understand to get less oxide than real, but ...... more??

    I haven't found any information about this, and I'm sure that the measurements are correct, because they showed the same values through the different MOS that I measured (8 in total).

    I hope someone has any idea. I'm desesperated!

    Thank you so much!!
  2. jcsd
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