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Homework Help: MOS device and high frequency C-V curve questions

  1. Dec 4, 2011 #1
    1. The problem statement, all variables and given/known data
    An MOS device has a following high-frequency C-V curve. The oxide thickness is 15nm. THe silicon doping is 3x10^17 cm^-3. Neglect interface charge.

    a) drawt the band diagram (include the gate electrode and gate oxide, label Fermi levels) at bias point where Vg=0 (point A)
    b)if the capacitance C at point A is 1/2 of the oxide capacitance, what is the surface potential (band bending) at A?

    2. Relevant equations



    3. The attempt at a solution
     

    Attached Files:

  2. jcsd
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