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NMOSFET parameter extraction

  1. Aug 13, 2014 #1
    Hey! I'm doing a lab assignment and need some guidance.

    i have measurement with L=1μmeter and w=10μmeter, but the id data is normalized to w=1μmeter, what does it mean?

    do I need to get Ids "un-normalized" for extraction, like Ids*1e-6= new Ids

    the second question is about low-field mobility, does the low-field mobility μ0 equal for all NMOSFETs? the BSIM guide Iam using have default value is 670 cm^2/Vsec for NMOSFET. but the extracted value is like 200cm^2/Vsec, I'm confused.

    I dont know if this is the right sub-forum for posting those questions, please moderators change it to appropriate sub-forum if needed.

    Thanks in advance
  2. jcsd
  3. Aug 15, 2014 #2
    I'm sorry you are not finding help at the moment. Is there any additional information you can share with us?
  4. Sep 7, 2014 #3
    The general MOSFET equation is Id = mu Cox W/L ((Vgs-Vth) Vds - Vds^2/2). This is the W/L they are referring to.
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