Npn BJT: Determine Mode of Operation Given Terminal Voltages

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In summary, given the terminal voltages of E = -0.10 V, B = 5.0 V, and C = 5.0 V, the npn BJT is in active mode, but the obtained values for V_BE and V_CE do not make physical sense and further investigation is needed.
  • #1
DivGradCurl
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Homework Statement



Determine the mode of operation of this npn BJT, given the terminal voltages.

E = -0.10 V
B = 5.0 V
C = 5.0 V

Homework Equations



Below

The Attempt at a Solution



According to the general rules, the EBJ is forward biased and the CBJ is reverse biased, leading to the conclusion that the device is in active mode. However, the values obtained (more below) do not make physical meaning. I just need to confirm my impression.

V_BE = V_B - V_E = 5.0 - (-0.10) = 5.1 V

V_CE = V_C - V_E = 5.0 - (-0.10) = 5.1 V

V_BC = V_BE - V_CE = 0

A typical V_BE is 0.7 V, and just 0.5 V is enough to forward bias EBJ; 5.1 V is way too much.

Just over 0.3 V is enough to reverse bias CBJ; 5.1 V is way too much.

If you plug this into current equations, they blow up to unrealistic values; it's not physical.

Is this analysis correct?

Thanks!
 
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  • #2


Yes, your analysis is correct. The values obtained for V_BE and V_CE are not physically possible for a typical BJT in active mode. This could be due to a faulty or damaged BJT or incorrect measurements. It would be helpful to double check the connections and measurements to ensure accuracy. If the values still do not make sense, it may be necessary to replace the BJT.
 

1. What is an NPN BJT?

An NPN BJT (Bipolar Junction Transistor) is a type of transistor that uses two layers of a semiconductor material, one of which is doped with impurities to create a base layer. It has three terminals - the emitter, base, and collector - and it works by controlling the flow of electrons from the emitter to the collector through the base.

2. How do you determine the mode of operation of an NPN BJT?

The mode of operation of an NPN BJT can be determined by analyzing the voltages at its three terminals - emitter, base, and collector. If the base-emitter junction is forward biased and the collector-emitter junction is reverse biased, the transistor is in the active mode. If both junctions are forward biased, it is in the saturation mode. And if both junctions are reverse biased, it is in the cut-off mode.

3. What are the operating conditions for the active mode of an NPN BJT?

The active mode of an NPN BJT requires the base-emitter junction to be forward biased with a voltage greater than 0.7V and the collector-emitter junction to be reverse biased with a voltage greater than the base-emitter voltage. This allows for a controlled flow of electrons from the emitter to the collector through the base.

4. How do you calculate the base current in an NPN BJT?

The base current in an NPN BJT can be calculated using Ohm's Law, where the base current (IB) is equal to the base-emitter voltage (VBE) divided by the base resistor (RB). It can also be calculated using the current gain (hFE) of the transistor, where IB = IC / hFE.

5. What are the limitations of an NPN BJT?

Some limitations of NPN BJTs include their size, power handling capabilities, and high heat dissipation. They also have low input impedance and require a small base current to control a larger collector current, making them susceptible to thermal runaway. Additionally, they are not suitable for high frequency applications due to their relatively low bandwidth.

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