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sanado
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Is the voltage drop across the emitter in an NPN transistor equal to 0?
What is the purpose of RE (found immediately after the emitter?)
What is the purpose of RE (found immediately after the emitter?)
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Voltage drop in NPN transistors refers to the decrease in voltage across the collector-emitter junction when an NPN transistor is in its active region. This drop occurs due to the voltage divider effect between the base-emitter and collector-emitter junctions.
Voltage drop can affect the performance of NPN transistors in several ways. It can decrease the gain of the transistor, increase power dissipation, and limit the maximum collector current. Additionally, voltage drop can cause thermal runaway and lead to failure of the transistor.
The voltage drop across the collector-emitter junction is directly proportional to the base current in NPN transistors. This means that as the base current increases, the voltage drop also increases, which in turn affects the transistor's performance.
The voltage drop in NPN transistors can be calculated using Ohm's law, where VCE = IC * RC, with VCE being the voltage drop, IC being the collector current, and RC being the collector resistor. Alternatively, it can also be calculated using the transistor's datasheet, which provides the maximum voltage drop at a given collector current.
The voltage drop in NPN transistors can be reduced by using a lower collector resistor value, choosing a transistor with a lower VCE(sat) value, or using a Darlington pair configuration. Additionally, proper heat sinking and thermal management can also help reduce the voltage drop and prevent thermal runaway in the transistor.