Hi, my labmates and I are trying to fabricate a functional organic semiconductor; however we are having problems indicative of surace leakage between the gate and drain, or oxide breakdown (Fowler-Nordheim or otherwise). So now we're trying to test our silicon wafer without the organic semiconductor to see if the oxide behaves as a good indulator or not. Does anybody know an equation to help predict the voltage at which breakdown would occur, or to plot V-I characteristics for the oxide ? Thanks !!