PN-junction Breakdown: Sudden Increase in Reverse Current

  • Thread starter abrowaqas
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In summary, the sudden increase in the small reverse saturation current at the breakdown voltage in PN-junction Diode is due to the phenomenon of "breakdown" where the junction is literally broken and can result in localized crystal melting. This creates a low resistance "short" in parallel with the junction, causing a large current flow. Breakdown can also occur when a large number of carriers are generated quickly or when carriers can tunnel across the junction through the bandgap. This can cause irreversible damage to the junction, but it is not the main cause of the high current.
  • #1
abrowaqas
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Why there is sudden increase in the small reverse saturation current at the breakdown voltage in PN-junction Diode?
 
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  • #2
The phenomenon is called "breakdown" because the junction is literally broken. A typical failure mechanism when the applied voltage gets too big is equivalent to an arc through the junction, resulting in localized crystal melting. This in turn puts a low resistance "short" in parallel with the junction, giving rise to large current flow.
 
  • #3
marcusl said:
The phenomenon is called "breakdown" because the junction is literally broken. A typical failure mechanism when the applied voltage gets too big is equivalent to an arc through the junction, resulting in localized crystal melting. This in turn puts a low resistance "short" in parallel with the junction, giving rise to large current flow.

Although breakdown can cause irreversible damage to a junction, that's not the cause but a possible effect of the high current.

Generally, breakdown occurs when a large number of carriers are generated very quickly, via impact ionization for example, or when carriers can tunnel across the junction through the bandgap.
 

What is PN-junction breakdown?

PN-junction breakdown is a phenomenon that occurs in a PN-junction diode when the applied reverse voltage exceeds a certain threshold value, resulting in a sudden increase in reverse current.

What causes PN-junction breakdown?

PN-junction breakdown is caused by the electric field created when a reverse voltage is applied to the PN-junction diode. This electric field can be strong enough to cause the bonds between the atoms in the junction to break, resulting in a sudden increase in reverse current.

What are the two types of PN-junction breakdown?

The two types of PN-junction breakdown are Zener breakdown and avalanche breakdown. Zener breakdown occurs in heavily doped diodes, while avalanche breakdown occurs in lightly doped diodes.

How does PN-junction breakdown affect the diode?

PN-junction breakdown can cause damage to the diode, as the sudden increase in reverse current can generate excessive heat and cause the diode to fail. This can also result in a permanent decrease in the diode's ability to function properly.

How can PN-junction breakdown be prevented?

PN-junction breakdown can be prevented by selecting a diode with a higher breakdown voltage, using a series resistor to limit the reverse current, and ensuring that the diode is not subjected to excessive voltage or current. Additionally, using a diode with a higher power rating can also help prevent breakdown.

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