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In MOSFET at strong inversion electrons confined to triangular quantum well, electrons occupy only 1 or 2 lowest subbands.

and the Van Dort model gives the quantum mechanical intrinsic carrier density in inversion channel via increased energy band-gap(ΔE).

N_{QM}=Nthis carrier amount is very high._{CL}× Exp^{(-ΔE/2kt)}

But density of states for inversion charges in subbads reduced from the higher 3-D density to the lower 2-D density.

Then still HOW the above Van Dort's formula giving that high amount of charge..?

Thank You.

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# Quantum Effects in MOSFET

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