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Quantum Effects in MOSFET

  1. Feb 22, 2016 #1
    Hello to all !

    In MOSFET at strong inversion electrons confined to triangular quantum well, electrons occupy only 1 or 2 lowest subbands.
    and the Van Dort model gives the quantum mechanical intrinsic carrier density in inversion channel via increased energy band-gap(ΔE).
    NQM = NCL× Exp(-ΔE/2kt) this carrier amount is very high.
    But density of states for inversion charges in subbads reduced from the higher 3-D density to the lower 2-D density.

    Then still HOW the above Van Dort's formula giving that high amount of charge..?

    Thank You.
     
  2. jcsd
  3. Feb 27, 2016 #2
    Thanks for the post! This is an automated courtesy bump. Sorry you aren't generating responses at the moment. Do you have any further information, come to any new conclusions or is it possible to reword the post?
     
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