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Question about BCl3 boron pre-deposition

  1. Oct 20, 2016 #1
    Hello I'm a newbie process engineer in a semiconductor fab.
    In our fab we have a process using BCl3 gas for boron pre-deposition, however it randomly generates defects on silicon wafers.
    The defect is like triangular dislocation (since the silicon substrate is <111>)
    Does anyone know the reason that generate this kind of defect and how to avoid or reduce the risk??
  2. jcsd
  3. Oct 26, 2016 #2
    Thanks for the thread! This is an automated courtesy bump. Sorry you aren't generating responses at the moment. Do you have any further information, come to any new conclusions or is it possible to reword the post? The more details the better.
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