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Question on semiconductor device,

  1. Feb 18, 2009 #1
    1. The problem statement, all variables and given/known data

    I have a question on semiconductor device,,

    A drift current density of Jdrf=150 A/cm2 is required in a semiconductor device using n-type silicon with an applied electric field of E=25V/cm. Determine the imjpurit doping concentration that will achieve this specification.

    i don't really understand this topic, can someone help me plz..

    the answer is, If Nd = 3.13 * 10power 16 per cmcube,, then impurity doping concentration will be 1200..

    i don't know how can i find Nd.. sind n has about the same value as Nd..



    2. Relevant equations

    Jdif = e(μn)nE

    3. The attempt at a solution

    (μn)n = 3.75 * 10 power -19


    how can i find n or Nd ??

    i know that (μn) = 3.75 * 10 power -19 / n
     
  2. jcsd
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