"Based only on the desire to limit minority carriers, why would silicon be preferable to germanium as a fabric for doped semiconductors?"
The Attempt at a Solution
Silicon has a band gap of approximately 1.1 eV while the band gap of germanium is around 0.7 eV. Thermal excitation is more prominent in low band gap materials, so silicon would be preferable due to its larger band gap. My question is, wouldn't thermal excitation also allow more majority carriers to enter the conduction band? Also, in the practical application of semiconductors, is it generally desirable to limit minority carriers? If so, why?