Reducing recombination losses in a semiconductor?

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I'm trying to understand recombination losses and ways to improve and reduce them in a standard crystalline silicon cell? I've been looking online for a while now but can't find any simple explanations.

I understand recombination occurs when a conduction band electron loses energy and re-occupies the energy state of an electron hole in the valence band. Ideally, we want this to happen as an electron flows out of a P-type semiconductor, around a wire, through a load, and back into the N-type semiconductor.

Sometimes though, recombination can occur in the N-type, P-type and surface of the junction, which means less power is generated.

How are these recombination losses reduced?
 

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Thanks for the post! This is an automated courtesy bump. Sorry you aren't generating responses at the moment. Do you have any further information, come to any new conclusions or is it possible to reword the post?
 

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