1. The problem statement, all variables and given/known data Given a silicon beam of diameter 10nm and length 100nm, what would its resistance be if it were doped with a p-type of 10^16/cm^3? 2. Relevant equations R= resistivity*length/area R= length/(qA*electron density* electron mobility) resistivity of silicon= 0.1 ohm*meters 3. The attempt at a solution I have enough variables to solve the first equation, but that doesn't take into account the doping at all. However, I'm not sure what to do with electron mobility if I'm supposed to use the second equation. Perhaps there's an equation I'm missing?