Hi, I have a confusion with the saturation region of the transistor. Please help me out. It is commonly said that, the forward biased emitter-base junction and forward biased base- collector results in device saturation. Considering a PNP transistor as an example, forward biasing the emitter- base junction results in flow of majority charges carriers(holes ) from emitter to base. Similarly, forward bias of base- collector junction results in flow of electrons from base to collector. In this case, the holes from emitter, do not reach the collector, it self. Then how can there be a larger current, when compared with the active region? Thanks.