# Semiconductor Bandgap Energy

1. Feb 10, 2013

### Darth Frodo

1. The problem statement, all variables and given/known data
The conductivity of an intrinsic silicon sample is found to be 1.02 mS.m-1 at 297.2 K
and 2.15 mS.m-1 at 307.9 K.
What is the bandgap energy in silicon?

2. Relevant equations
ni = Ns(e$^{\frac{-E}{2kT}}$)

$\sigma$ = enip + μn)

3. The attempt at a solution
I'm having a bit of trouble.

Is ni a function of Temperature?
I assume not because as T increases, more charge carriers become available.

Is Ns a function of Temperature?

Last edited: Feb 10, 2013