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Semiconductor Bandgap Energy

  1. Feb 10, 2013 #1
    1. The problem statement, all variables and given/known data
    The conductivity of an intrinsic silicon sample is found to be 1.02 mS.m-1 at 297.2 K
    and 2.15 mS.m-1 at 307.9 K.
    What is the bandgap energy in silicon?


    2. Relevant equations
    ni = Ns(e[itex]^{\frac{-E}{2kT}}[/itex])

    [itex]\sigma[/itex] = enip + μn)

    3. The attempt at a solution
    I'm having a bit of trouble.

    Is ni a function of Temperature?
    I assume not because as T increases, more charge carriers become available.

    Is Ns a function of Temperature?
     
    Last edited: Feb 10, 2013
  2. jcsd
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