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Semiconductor physics: Concentration and type of impurities, major and minor carriers

  1. Apr 14, 2012 #1
    1. The problem statement, all variables and given/known data
    Silicon with area of 4mm2 has on the temperature of 343K concentration of holes 1.47*1015 cm-3. Moveability(?) of carriers (sorry, english isn't my native language) is 390 cm2/Vs and 970 cm2/Vs.


    2. Relevant equations
    Calculate:
    a) Concentration and type of added impurities and concentration of major and minor carriers.​
    b) Electron and hole current and total current through semiconductor if on it acts electrical field of 8Vcm.​


    3. The attempt at a solution
    n(343K)=ni2/p
    But I need to calculate intrinsic ni for 343K temperature, right? If I use this formula ni(T) = A*T3/2*e(-Eg(T)/2kT) I might calculate A for 300K but I still need Eg, the forbidden zone energy level to calculate ni at 343K. Help!
     
  2. jcsd
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