1. The problem statement, all variables and given/known data Silicon with area of 4mm2 has on the temperature of 343K concentration of holes 1.47*1015 cm-3. Moveability(?) of carriers (sorry, english isn't my native language) is 390 cm2/Vs and 970 cm2/Vs. 2. Relevant equations Calculate: a) Concentration and type of added impurities and concentration of major and minor carriers.b) Electron and hole current and total current through semiconductor if on it acts electrical field of 8Vcm. 3. The attempt at a solution n(343K)=ni2/p But I need to calculate intrinsic ni for 343K temperature, right? If I use this formula ni(T) = A*T3/2*e(-Eg(T)/2kT) I might calculate A for 300K but I still need Eg, the forbidden zone energy level to calculate ni at 343K. Help!