Calculating Donor Concentration in Si at 300K | Semiconductor Homework Q1 & Q2

In summary: KT)Therefore, the concentration of unionized donors (n) is (1.5 x 10^10) x e(-0.1/KT) per cm^-3.In summary, we can solve for the donor concentration (Nd) in Q1 by using the equation n(o) x p(o) = ni^2 and for the concentration of unionized donors (n) in Q2 by using the equation n(o) = ni x e((Ef-Ei))/KT). However, in order to solve for the concentration of acceptors (Na) in Q2, we need to know the temperature (T).
  • #1
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Homework Statement



Q1
A Si sample is doped with 10^16 per cm^-3 boron atoms and a certain
number of shallow donors. The fermi level (Ef) is 0.36 eV above Ei
(intrinsic energy level) at 300K. What is the donor concentration Nd?

For Si at 300K ni(intrinsic carrier concentration) = 1.5 x 10^10 per
cm cube

Q2
A Si sample contains 10^16 per cm^-3 In(indium) acceptor atoms and
a certain number of shallow donors. The In (indium) acceptor level is
0.16 eV above Ev(Valence band edge), and Ef is 0.26eV above Ev at
300K. How many in atoms in cm per cube are unionized (i.e. neutral)?

For Si at 300K ni(intrinsic carrier concentration) = 1.5 x 10^10 per
cm cube

Homework Equations




n(o) x p(o) = ni^2

n(o) = ni x e((Ef-Ei))/KT)

p(o) = ni x e((Ei-Ef)/KT)

The Attempt at a Solution



I haven't been able to make a good decision on how to start...

If you have any suggestions, let me know. I'm open to everything!

Thanks
 
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  • #2
for sharing this interesting problem! I would approach these questions by using the equations given and the known values for the intrinsic carrier concentration (ni) of silicon at 300K.

For Q1, we can use the equation n(o) x p(o) = ni^2, where n(o) is the concentration of free electrons and p(o) is the concentration of holes. Since the sample is doped with boron atoms, the concentration of acceptors (Na) is equal to the concentration of holes (p). We can then rearrange the equation to solve for the donor concentration (Nd).

n(o) = ni x e((Ef-Ei))/KT)

p(o) = Nd

Substituting in the given values, we get:

Ni x Nd = ni^2

10^16 x Nd = (1.5 x 10^10)^2

Nd = (1.5 x 10^10)^2 / 10^16

Nd = 2.25 x 10^-3 per cm^-3

Therefore, the donor concentration Nd is 2.25 x 10^-3 per cm^-3.

For Q2, we can use the same equation n(o) x p(o) = ni^2, but this time we are given the concentration of acceptors (Na) and we need to find the concentration of unionized donors (n). We can use the equation for p(o) and substitute in the given values to solve for n.

p(o) = ni x e((Ei-Ef)/KT)

Na = p(o)

Substituting in the given values, we get:

Ni x Na = ni x e((Ei-Ef)/KT)

10^16 x Na = (1.5 x 10^10) x e((0.16-0.26)/KT)

Na = (1.5 x 10^10) x e(-0.1/KT)

Since we don't have the value for temperature (T), we cannot solve for Na. However, we can use the equation n(o) = ni x e((Ef-Ei))/KT) to find the concentration of unionized donors (n).

n(o) = ni x e((Ef-Ei))/KT)

n(o) = (1.5 x 10^10) x e((0.26-0.36)/KT)

n(o)
 

1. What is a semiconductor?

A semiconductor is a type of material that has electrical conductivity between that of a conductor and an insulator. It is commonly used in electronic devices such as computers and smartphones.

2. How do semiconductors work?

Semiconductors work by having a band gap, which is a range of energy levels where no electrons can exist. This allows them to control the flow of electricity by either adding or removing electrons to the material.

3. What are the most common types of semiconductors?

The most common types of semiconductors are silicon, germanium, and gallium arsenide. Silicon is the most widely used due to its abundance and ability to form a stable oxide layer.

4. What are the applications of semiconductors?

Semiconductors have a wide range of applications, including in computer chips, solar cells, LED lights, transistors, and sensors. They are also used in the production of integrated circuits and microchips.

5. What is the difference between a semiconductor and a conductor?

The main difference between a semiconductor and a conductor is their ability to conduct electricity. Semiconductors have a lower conductivity compared to conductors, but higher than insulators. Additionally, the conductivity of semiconductors can be controlled, unlike conductors which have a constant conductivity.

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