CD4007 Specs: Vtn, kn, Channel Length Modulation

  • Thread starter KeithLucas
  • Start date
In summary, to find the threshold voltage Vtn, MOSFET transconductance parameter kn, and channel length modulation parameter for MOSFET 6 on the CD4007, you can look for a SPICE model and use it to extract the data. The default W and L values for the NMOS and PMOS transistors are 30 and 10 um, and 60 and 10 um respectively, and AD and AS should not be included.
  • #1
KeithLucas
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0
I'm looking for the threshold voltage Vtn, the MOSFET transconductance parameter kn and the channel length modulation parameter for MOSFET 6 on the CD4007. Where can I look these values up?
 
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  • #2
did you try the datasheet ?
would be the obvious starting place :wink:

cheers
Dave
 
  • #3
davenn said:
did you try the datasheet ?
would be the obvious starting place :wink:

cheers
Dave

Did YOU try the data sheet? Not such an obvious place for what was being asked.

Moving on:

OP, Which FET do you consider to be #6?

The answer would be foundry and process dependent and I doubt it is available on any data sheet. Maybe you can look for a spice model and either read the model (if it is readable), or use spice to extract the data.

Here is a lab example
http://www.ece.ucsb.edu/Faculty/rodwell/Classes/ece2c/labs/Lab_2_2C_2007.pdf

EDIT

Here is the spice model
CD4007 NMOS and PMOS transistor SPICE models

* Typical - Typical Condition
.model MbreakND NMOS
+ Level=1 Gamma= 0 Xj=0
+ Tox=1200n Phi=.6 Rs=0 Kp=111u Vto=2.0 Lambda=0.01
+ Rd=0 Cbd=2.0p Cbs=2.0p Pb=.8 Cgso=0.1p
+ Cgdo=0.1p Is=16.64p N=1

*The default W and L is 30 and 10 um respectively and AD and AS
*should not be included..model MbreakPD PMOS
+ Level=1 Gamma= 0 Xj=0
+ Tox=1200n Phi=.6 Rs=0 Kp=55u Vto=-1.5 Lambda=0.04
+ Rd=0 Cbd=4.0p Cbs=4.0p Pb=.8 Cgso=0.2p
+ Cgdo=0.2p Is=16.64p N=1

*The default W and L is 60 and 10 um respectively and AD and AS
*should not be included.
 
Last edited:
  • #4
Thanks, I'll run a SPICE model to get it!
 
  • #5


The CD4007 is a CMOS integrated circuit that contains multiple MOSFETs. The threshold voltage (Vtn) and transconductance parameter (kn) of each MOSFET may vary depending on the specific manufacturing process used for the CD4007. Therefore, it is important to consult the data sheet provided by the manufacturer for the specific device you are using.

The channel length modulation parameter, on the other hand, is typically not specified in data sheets as it is a characteristic of the MOSFET's physical structure rather than a controllable parameter. However, it can be estimated using the MOSFET's drain current vs. drain-source voltage curves.

In order to find the threshold voltage and transconductance parameter for MOSFET 6 on the CD4007, you can refer to the device's data sheet or contact the manufacturer for more detailed information. It is also recommended to consult relevant literature or online resources for further understanding of these parameters and their impact on the MOSFET's performance.
 

1. What is Vtn in CD4007 specifications?

Vtn, or threshold voltage, is the minimum voltage required to turn on the transistor in the CD4007. It is typically around 1-2 volts for this particular transistor.

2. What is kn in CD4007 specifications?

Kn, or transconductance parameter, is a measure of how much current the transistor can conduct for a given gate-source voltage. In other words, it represents the strength of the transistor.

3. How does channel length modulation affect the performance of CD4007?

Channel length modulation refers to the change in channel length of the transistor as the drain-source voltage increases. This can cause a decrease in output resistance and an increase in saturation current, which can affect the performance of the transistor.

4. What is the typical channel length for CD4007?

The channel length for CD4007 is typically around 5 micrometers. However, this can vary depending on the manufacturing process and specifications.

5. How do the specs of CD4007 compare to other transistors?

The specifications of CD4007 are relatively average compared to other transistors. However, it has the advantage of being a dual gate MOSFET, which allows for more versatile circuit designs.

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