I read on a table by Dr Lynn Fuller on sputtering various materials and there was a table relating RF sputtering power to stress, with a sweet spot at around 300 watts per square inch or roughly 500 milliwatts per square millimeter on the target. The material in question is Silicon Carbide. Our resident process guru says there is no sweet spot, which would be neutral stress wise, neither compressive nor tensile but only compressive. We see at our level, about 1 Kw, inability to create layers much more than 2 microns thick without stress so bad it delaminates. It would help our product if it were true for Silicon Carbide that there is a corrolation between RF power on the target V stress. Anyone here have information on this topic?