Thermal oxidation of Si

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Hi guys,

I'm trying to use thermal oxidation with Si wafers in order to get SiO2 to use for electric components. I've been trying to find out how the partial pressure of the gases used (O2 in this case, it's a dry oxidation) affect the oxidation time, but I haven't been able to find an answer.

I hope anyone can help me with this little dilema, thanks in advance
 

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  • #2
phyzguy
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You must not have tried very hard, I googled "thermal oxidation of silicon" and the first link was to the classic Deal and Grove paper that describes their model. Here is the link. Figure 8 answers your question.
 
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I've had that paper for some time but for some reason I overlooked the last part when I read it.


Thank you very much for the answer, this thread can be closed now.
 

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