I am trying to produce a thin film of VO2 using reactive ion sputtering and am having some issues. The main one is that I have no clue what is being deposited and exactly how think it is. I have been depositing the film on both Si(100) and glass slides. When I take a XRD scan of both substrates it appears as though the only thing there is the substrate, I.E. a peak at about 70 degree for Si and a amorphous region around 20-30 degrees. My thoughts on this are as follows. First, there has to be something on the substrates since the glass is obviously tinted and the Si looks a little different also as compared to a bare wafer. If there is something there shouldnt i somehow see it on a scan from 10-70 degrees(which Im not). I have done a very fine scan of the substrae and still no results. The reaction conditions in the paper I'm copying seem to suggest that I should expect a deposition rate around 10nm/min which should have yielded 200nm, the elipsometry only seems to show 20-30nm and a refractive index around 1.5-1.8 when it should be more like 2.2. This seems to suggest That while i have something its not VO2, but shouldnt it show up on XRD and a peak somewhere? So why would something not show up on the XRD(using simiens D5005)? I would guess that it is amorphous and sortof gets lost in the glass area but nothing shows on the Si so that doesn't seem to be the case. beside that i would thing that that you would atleast see something.