Sorry this seems to be the wrong forum. I've posted this in the electrical engineering forum. Im studying basic electronics and transistor amplification is confusing me. Now I understand the basics of a npn\pnp transistor but here's what I dont get What I've read, says that the amplification occurs because the emitter base jn is forward biased and hence low resistance leading to a low potential drop across it and the collector-base jn is reverse biased and has a high resistance and hence a higher pd across it. Suppose we are looking at an npn transistor, The electrons from the emitter enter the base with little resistance and hence only a low voltage need be applied. Now since electrons are minority carriers in the base they can pass through the reverse biased collector-base jn and there is a high current through the collector some electrons recombine and is lost a base current My question is how can the reverse biased c-b jn offer high resistance to electrons which are minority carriers in the base? If the electrons can move from the base to collector with ease wouldn't that mean that there would be less of an energy loss and hence consequently only a small pd?