Who can tell me the microscopic mechanics of electric polarition of Si3N4

In summary, Si3N4 is an amorphous molecule with mostly covalent bonds. It has been studied for its dielectric properties and has a relative permittivity of 7.8. It has regained interest for use in MOSFETs and nanotube-based FETs.
  • #1
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Si3N4 is an amorphous.What's the microscopic structure of it and Which type of polarization is involved when it is presented in an Electric field(Eletronic polarization,orientational polarization,Atomic ploraization or some others)?Is there any theories to calculate the permittivity of Si3Ni4
By the way, I want to know if the molecule of Si3N4 combined by ionic bonds or atomic bonds?Thank you!
 
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  • #2
Silicon nitride is a mostly covalently bonded molecule (hence the amorphousness). Under certain deposition conditions, however, it may possibly take on crystal characteristics similar to the substrate (but I'm not sure about this).

The dielectric properties of Si3N4 are pretty well known. It has been studied since the 70s as a possible gate dielectric. It has a relative permittivity (dielectric constant) of 7.8, which is greater than that of SiO2. It has recently regained the interest of fabrication folk for possible use in MOSFETs and more easily in nanotube-based FETs.

1. B Swaroop et al J. Phys. D: Appl. Phys. 3 803-806 (1970)

2. S Li, Z Yu, P Burke J. Vac. Sci. Technol. B 22(6) 3112 - 3114 (2004)
 
  • #3


The microscopic mechanics of electric polarization in Si3N4 can be explained by the movement of electrons within the material. As an amorphous material, Si3N4 does not have a defined crystal structure, but rather a disordered arrangement of atoms. This makes it difficult to determine the exact microscopic structure of the material.

In terms of polarization, it is likely that both electronic and orientational polarizations are involved when Si3N4 is presented in an electric field. Electronic polarization occurs when the displacement of electrons creates a dipole moment, while orientational polarization occurs when the orientation of polar molecules in the material changes in response to an electric field.

There are various theories that can be used to calculate the permittivity of Si3N4, such as the Clausius-Mossotti equation or the Lorentz-Lorenz equation. These equations take into account factors such as the dielectric constant and the molecular structure of the material.

As for the bonding in Si3N4, it is a combination of both ionic and covalent bonds. The silicon and nitrogen atoms are bonded through covalent bonds, while there are also weaker ionic bonds between the positively charged silicon ions and the negatively charged nitrogen ions. This combination of bonds gives Si3N4 its unique properties and allows for its use in various applications.
 

1. What is electric polarition?

Electric polarition is a phenomenon that occurs when an electric field interacts with a material, causing the material to become polarized and form a dipole moment.

2. What is the significance of Si3N4 in electric polarition?

Si3N4, or silicon nitride, is a material commonly used in electronic devices such as transistors and integrated circuits. It exhibits strong electric polarition properties, making it a key component in many electronic applications.

3. How does electric polarition occur in Si3N4?

In Si3N4, electric polarition occurs due to the presence of polar bonds between silicon and nitrogen atoms. When an electric field is applied, these polar bonds are distorted, resulting in a dipole moment and the polarization of the material.

4. How is the microscopic mechanics of electric polarition of Si3N4 studied?

The microscopic mechanics of electric polarition in Si3N4 can be studied using techniques such as polarized light microscopy, Raman spectroscopy, and atomic force microscopy. These methods allow scientists to observe and analyze the changes in the material's structure and properties under an electric field.

5. What are the potential applications of understanding the microscopic mechanics of electric polarition of Si3N4?

Understanding the microscopic mechanics of electric polarition in Si3N4 can lead to improvements in electronic devices, as well as advancements in the fields of photonics and optoelectronics. It can also aid in the development of new materials with enhanced electric polarition properties.

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