Why is there no saturation current for Si photoanode during OER?

In summary, the Si/Ni photoanode is created by sputtering a layer of Ni onto a n-p homojunction Si substrate. This process involves bombarding the substrate with energetic particles to ensure a strong adhesion between the Ni and Si. The photoanode is then immersed in KOH solution, which helps transfer electrons from the photoanode to generate electrical energy.
  • #1
Amy_chen
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TL;DR Summary
Hello all,
When I investigate an oxygen evolution reaction (OER) performance of Si/Ni photoanode for water splitting, there is no saturation current in LSV lines. I don't understand why. Thank you so much.
The Si/Ni photoanode was prepared by sputtering Ni on n-p homojunction Si substrate, and the electrolyte was KOH solution.
 
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  • #2
The sputtering process involves depositing a thin layer of Ni onto the n-p homojunction Si substrate by bombarding it with energetic particles, such as argon ions. This creates a strong adhesion between the Ni and the Si substrate, resulting in an efficient transfer of electrons between the two materials. After sputtering, the Ni/Si photoanode is then immersed in a KOH solution to form the electrolyte. The KOH solution facilitates the transfer of electrons from the photoanode to the electrolyte, allowing for the generation of electrical energy.
 

1. Why is there no saturation current for Si photoanode during OER?

The lack of saturation current for Si photoanode during OER is due to the fact that silicon is not a good catalyst for the oxygen evolution reaction. This means that as the applied voltage increases, the current does not reach a maximum value, but instead continues to increase.

2. Can other materials be used as photoanodes for OER?

Yes, there are several other materials that can be used as photoanodes for OER, such as metal oxides (e.g. titanium dioxide), metal chalcogenides (e.g. molybdenum sulfide), and perovskite oxides (e.g. strontium titanate). These materials have better catalytic properties for OER compared to silicon.

3. How does the band gap of a material affect its performance as a photoanode for OER?

The band gap of a material plays a crucial role in its performance as a photoanode for OER. A material with a band gap that matches the energy of the incident light will have better efficiency in converting light energy into chemical energy for OER. This is known as the band gap matching principle.

4. Are there any strategies to improve the catalytic activity of Si photoanodes for OER?

Yes, there are several strategies that can be used to improve the catalytic activity of Si photoanodes for OER. These include surface modifications, doping with other elements, and incorporating co-catalysts. These strategies aim to increase the number of active sites and reduce charge transfer resistance, leading to improved catalytic activity.

5. Can Si photoanodes be used for other photoelectrochemical reactions besides OER?

Yes, Si photoanodes can be used for other photoelectrochemical reactions, such as water splitting and CO2 reduction. However, their performance may vary depending on the specific reaction and the conditions used. Other materials may be more suitable for certain reactions due to their band gap and catalytic properties.

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