Crystal Growth - Czochralski technique, finding concen. of dopant after growth

bmarson123

1. The problem statement, all variables and given/known data
A doped silicon ingot is to be grown by the Czochralski technique with a dopant concentration of 10¹⁶boron atoms/cm³. If k₀ = 0.9 for boron/Si, what concentration of boron atoms should be in the melt?

2. Relevant equations
C_s/C₀ = k₀ (1 - m/m₀) ^k₀-1

k0 = C_s / C_l

3. The attempt at a solution
I think it's just a case of subbing in the numbers to establish C_s and then using this in the second equation to find C_l, but I'm really confused about what the values of M and M₀ should be in this scenario.

Redbelly98

To be honest, I'm not familiar with this topic but I see that your question has gone unanswered for nearly 1-1/2 days so I'll see what I can do to help.

What do the m and m₀ in the equation represent? Wherever you got that equation from, there should be definitions of all the terms in it.

Also, is this question from a Physics class or an Engineering class? If it belongs in the Engineering homework area, I could move your post there where people more knowledgeable about it are more likely to see it.