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Crystal Growth  Czochralski technique, finding concen. of dopant after growth 
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#1
Jan1312, 06:03 AM

P: 24

1. The problem statement, all variables and given/known data
A doped silicon ingot is to be grown by the Czochralski technique with a dopant concentration of 10^{16}boron atoms/cm^{3}. If k_{0} = 0.9 for boron/Si, what concentration of boron atoms should be in the melt? 2. Relevant equations C_{s}/C_{0} = k_{0} (1  m/m_{0}) ^{k01} k0 = C_{s} / C_{l} 3. The attempt at a solution I think it's just a case of subbing in the numbers to establish C_{s} and then using this in the second equation to find C_{l}, but I'm really confused about what the values of M and M_{0} should be in this scenario. 


#2
Jan1412, 05:20 PM

Mentor
P: 12,070

To be honest, I'm not familiar with this topic but I see that your question has gone unanswered for nearly 11/2 days so I'll see what I can do to help.
What do the m and m_{0} in the equation represent? Wherever you got that equation from, there should be definitions of all the terms in it. Also, is this question from a Physics class or an Engineering class? If it belongs in the Engineering homework area, I could move your post there where people more knowledgeable about it are more likely to see it. 


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