Crystal Growth - Czochralski technique, finding concen. of dopant after growth

by bmarson123
Tags: crystal, czochralski, doping, growth
bmarson123 is offline
Jan13-12, 06:03 AM
P: 24
1. The problem statement, all variables and given/known data
A doped silicon ingot is to be grown by the Czochralski technique with a dopant concentration of 1016boron atoms/cm3. If k0 = 0.9 for boron/Si, what concentration of boron atoms should be in the melt?

2. Relevant equations
Cs/C0 = k0 (1 - m/m0) k0-1

k0 = Cs / Cl

3. The attempt at a solution
I think it's just a case of subbing in the numbers to establish Cs and then using this in the second equation to find Cl, but I'm really confused about what the values of M and M0 should be in this scenario.
Phys.Org News Partner Science news on
Scientists pinpoint when harmless bacteria became flesh-eating monsters
Asian air pollution affect Pacific Ocean storms
Rocket leak delays space station delivery launch (Update)
Redbelly98 is offline
Jan14-12, 05:20 PM
Redbelly98's Avatar
P: 11,984
To be honest, I'm not familiar with this topic but I see that your question has gone unanswered for nearly 1-1/2 days so I'll see what I can do to help.

What do the m and m0 in the equation represent? Wherever you got that equation from, there should be definitions of all the terms in it.

Also, is this question from a Physics class or an Engineering class? If it belongs in the Engineering homework area, I could move your post there where people more knowledgeable about it are more likely to see it.

Register to reply

Related Discussions
crystal growth angle Atomic, Solid State, Comp. Physics 0
Semiconductor: Cz Crystal Growth Engineering, Comp Sci, & Technology Homework 3
crystal growth in solid state General Physics 0
Limit of Crystal Growth Furnace Calculus & Beyond Homework 2