Register to reply

Crystal Growth - Czochralski technique, finding concen. of dopant after growth

by bmarson123
Tags: crystal, czochralski, doping, growth
Share this thread:
bmarson123
#1
Jan13-12, 06:03 AM
P: 24
1. The problem statement, all variables and given/known data
A doped silicon ingot is to be grown by the Czochralski technique with a dopant concentration of 1016boron atoms/cm3. If k0 = 0.9 for boron/Si, what concentration of boron atoms should be in the melt?

2. Relevant equations
Cs/C0 = k0 (1 - m/m0) k0-1

k0 = Cs / Cl

3. The attempt at a solution
I think it's just a case of subbing in the numbers to establish Cs and then using this in the second equation to find Cl, but I'm really confused about what the values of M and M0 should be in this scenario.
Phys.Org News Partner Science news on Phys.org
Fungus deadly to AIDS patients found to grow on trees
Canola genome sequence reveals evolutionary 'love triangle'
Scientists uncover clues to role of magnetism in iron-based superconductors
Redbelly98
#2
Jan14-12, 05:20 PM
Mentor
Redbelly98's Avatar
P: 12,069
To be honest, I'm not familiar with this topic but I see that your question has gone unanswered for nearly 1-1/2 days so I'll see what I can do to help.

What do the m and m0 in the equation represent? Wherever you got that equation from, there should be definitions of all the terms in it.

Also, is this question from a Physics class or an Engineering class? If it belongs in the Engineering homework area, I could move your post there where people more knowledgeable about it are more likely to see it.


Register to reply

Related Discussions
Crystal growth angle Atomic, Solid State, Comp. Physics 0
Semiconductor: Cz Crystal Growth Engineering, Comp Sci, & Technology Homework 3
Crystal growth in solid state General Physics 0
Limit of Crystal Growth Furnace Calculus & Beyond Homework 2