Recent content by htzzz

Thank you phyzguy! So it means as the gate voltage increases, the voltage across the oxide will increase while the surface potential is constant? And the assumption that semiconductor bulk charge is much greater than inversion charge (Qb >> Qinv) which was used in deriving the threshold...

Hi, I am a bit confused about the MOS strong inversion case. When Vg>>Vth, is the equation describing gate voltage at threshold still applicable? If not, what is the expression for corresponding surface potential and depletion width. Some books suggest that surface potential and depletion...