Recent content by mingda

You have to expand the potential using the orthogonal special functions under your symmetry, at each region, and match the boundary condition for dielectric displacements. Actually there is a paper about this problem: http://www.sciencedirect.com/science/article/pii/003810988190034X

Hi! There is a very good book by P W Anderson "Theory of High Tc Superconductor", also there is a very good review by P. A. Lee in Review of Modern Physics. The general approach to high Tc is doped Mott insulator.

\dot{\varphi} = i [H, \varphi ], we obtain \int d^3x [ \delta{\varphi}^2, \varphi ]=0 Eq(1) differentiate Heisenberg Eq. again, we have \dot\dot{\varphi} = i [H, \dot{\varphi} ]=- [H, [H, \dot{\varphi} ] ] substitute \Pi (x) = \dot{\varphi}(x) back, using the specific form of H and use...

first, from the condition i*d(phi)/dt=[H,phi], you can arrive an equation, which makes [intgral(delta_phi)^2,phi]=0, then you differentiate the Heisenberg, equation, get d^2(phi)/dt^2=[H,[H,phi]], and substitute back. Then you get K-G equation immediately