Crystallization of HfO2: Impact on Dielectric Properties below 700-800 C

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HfO2 is considered to be used as a dielectric but if it crystallizes locally its electrical properties becomes unstable. This happens around 700-800 C, which is below where most semiconductor anneals require. Shouldn't this preclude its use?
 
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http://www.electrochem.org/meetings/scheduler/abstracts/210/1129.pdf
 
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Thanks for the paper link, very interesting. The conducting AFM is telling, since it always detects current through the dielectric, just a matter of degree of uniformity.