Does Increasing Hole Density in an NPN Transistor Base Decrease Beta?

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If we make an NPN transistor and change the base doping level so that we get a higher consentration of holes will β increase or decrease? Why?

I know β=IC/IB. Will more holes in the base make more electrons pass from the emitter to the collector increasing IC and thereby β? Or will IB increase propertionally so that β remains the same? What do you think?
 
on Phys.org
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More hole density in an npn base results in a decrease in beta.

Claude
 

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