Field effect transistor made of graphene: how does it work?
I am desperately trying to understand how this device is working... I would like to precise that I understand how field effect transistors/junctions based on p- and n-types semi-conductors are working (with a p-type gate it is ok; with a n-type gate it is already less ok since holes transport is not intuitive to me).
I am trying to make a parallel between these "conventional" transistors and the one made out of graphene described for the first time in Novoselov's paper of 2004 ("Electric field effect in atomatically thin carbon films"). But I don't see what happens between the graphene and the silicon.
Could anybody please help me on this?