Ok, I think I was overthinking this. It seems easier than I originally thought.
I think the hole concentration is calculated using
Na - Nd = (2-1)x1016
since there are more acceptors than donors so therefore the silicon is p-type with a hole concentration of
1*10^{16} cm^{-3}...
1. A Silicon wafer is doped with 2*10^16 cm^-3 Boron and 10^16 cm^-3 Phosphorous atoms. Calculate the electron and hole concentrations, the Fermi-level and the resistivity at room temperature
I have no idea how to work out the first part of this question as my lecture notes are lacking in...