Electron & hole concentrations after doping silicon.

[Alex-012]

1. A Silicon wafer is doped with 2*10^16 cm^-3 Boron and 10^16 cm^-3 Phosphorous atoms. Calculate the electron and hole concentrations, the Fermi-level and the resistivity at room temperature

I have no idea how to work out the first part of this question as my lecture notes are lacking in material which wasn't discussed in the lecture and because I am at home for christmas I have no access to my recommended textbooks. If anyone could help me out I would be extremely grateful!

 

[Alex-012]

Ok, I think I was overthinking this. It seems easier than I originally thought.
I think the hole concentration is calculated using

N_a - N_d = (2-1)x10¹⁶

since there are more acceptors than donors so therefore the silicon is p-type with a hole concentration of

1*10^{16} cm^{-3}

Electron concentration is then calculated using:
np = n_{i}^2

which gives

n = (1.5\times10^{10})^2/10^{16} = 2.25\times 10^{4} cm^{-3}

Or am I way off the mark?