Flash Memory Floating Gates and heavy ions causing bit flipping

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SUMMARY

The discussion centers on the radiation hardness of flash memory, specifically regarding ProASIC3 configurations. It is established that flash-based FPGAs, such as ProASIC3, exhibit greater resilience to single-event upsets (SEUs) caused by heavy ions compared to SRAM-based devices. However, they are not entirely immune to such radiation effects. The source referenced is a NASA report that supports these claims, indicating a nuanced understanding of flash memory's capabilities in radiation environments.

PREREQUISITES
  • Understanding of flash memory technology
  • Knowledge of field-programmable gate arrays (FPGAs)
  • Familiarity with single-event upsets (SEUs) and their implications
  • Basic principles of radiation effects on electronic components
NEXT STEPS
  • Research the radiation hardness of ProASIC3 FPGAs
  • Study the mechanisms of single-event upsets (SEUs) in flash memory
  • Explore NASA's findings on radiation effects in electronic devices
  • Learn about the differences between flash-based and SRAM-based FPGAs
USEFUL FOR

This discussion is beneficial for electrical engineers, FPGA designers, and researchers focused on radiation effects in electronic systems, particularly those working with space applications or environments with high radiation exposure.

addigde
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Hello!
I'm always thought what flash does not have radiation hardened capabilities cause they have got floating gate what can be switched by heavy ion

But, according to page 36 NASAs reporters maintain what configuration of ProASIC3 is already hardened by nature.

https://www.inaoep.mx/seressa2015/archivos/Jueves_11_00_BERG.pdf

Can somebody explain, please, does it has an some acknowledge? Thanks in advance!
 
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I think what they are saying is that flash-based FPGAs are harder than SRAM-based devices, not that they are completely immune to SEUs. But it's a long presentation and I may have missed the point.
 
Yes, I thought so at the beginning but after searching another similar sources I found the same declaration.
That's why I decided to clarify physics basis in this case from this source.
 

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