
#1
Jun409, 02:38 AM

P: 76

1. The problem statement, all variables and given/known data
Forward resistance of the Base Emitter Junction showed a value of 12ohms when it was measured by (x1) resistance scale of an analogue multimeter .And it showed 70ohms when it was measured using (x 10) scale factor .The variation in the two readings occurs due to 1.the presence of Base Collector junction 2.thin base region 3.Different bias potentials applied by the meter 4.An error in the multimeter 2. Relevant equations 3. The attempt at a solution This is an MCQ question and i don't have anyworks to show >But i personally think answer should be C.Can anyone help me !!!!!!!!! 



#2
Jun409, 07:03 AM

P: 76

no answers for 5 hours !!!!!!!!!!!




#3
Jun409, 11:04 AM

Mentor
P: 11,986





#4
Jun409, 06:09 PM

P: 196

Forward resistance of the Base Emmiter Junction?
The transistor has a dynamic emitter resistance, Re, which depends on the collector current. Collector current is a function of...




#5
Jun1509, 07:46 PM

Sci Advisor
P: 4,003

The base emitter junction of a BJT behaves just like any other diode and its resistance varies with voltage. The curve of this function is very non linear.
So, yes, I think your answer is correct. 3.Different bias potentials applied by the meter 


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