Recent content by matteo83

Formula for density of electrons in conduction band is a good approximation for a classical gas of carriers in intrinsic semiconductors. Only if electron gas is classical you can approximate Fermi - Dirac statistic with Boltzmann one and only if the semiconductor is intrinsic Fermi's level is in...

Cut it!

The concept of effective mass allows you to consider electrons in conduction band or holes in valence band as totally free particles. Since effective mass, as you can see by its definition, includes lattice periodic potential effects on carriers (E(K) depends on V(r)). So if carriers densities...

Your question is very interesting. I have never reflected on thermal equilibrium concept in these systems, but I think that solution is in the difference between thermal equilibrium and "equilibrium" that set up in not homogeneous system without external biasing where in every point of space...

In free electron model of semiconductor carriers the periodic lattice potential effect is yet included in effective mass concept.

I have only read about "equivalent generation and recombination in stationary state" when the system is homogeneous, since carriers concentration are constant and spatial derivatives vanishes.

Diagram in real space shows the dependence of band edge E_{C} (r) or E_{V} (r) to the position r inside the system. This dependence is related to variation of carriers concentration with the position n(r), p(r); typical of inhomogeneous doped material (Ex: pn junction). In this system the...