SUMMARY
The discussion focuses on the relationship between band diagrams in k-space and real space, particularly in the context of p-n junctions. It highlights how the band edge energies E_{C}(r) and E_{V}(r) depend on the position r within inhomogeneously doped materials, where carrier concentration varies. The total current density is derived from drift and diffusion contributions, with the internal electric field described by the potential function E(r) = -grad(φ(r)). The discussion emphasizes the importance of solving Schrödinger's Equation to obtain the band structure of these systems, noting that while k-space is applicable to homogeneous systems, real-space diagrams are essential for understanding inhomogeneous conditions.
PREREQUISITES
- Understanding of band theory and band diagrams
- Familiarity with Schrödinger's Equation and its applications
- Knowledge of p-n junctions and carrier concentration
- Basic principles of electric fields and potential functions
NEXT STEPS
- Study the derivation of band structures from Schrödinger's Equation in inhomogeneous systems
- Learn about the application of Fick's Law in semiconductor physics
- Explore Fourier transforms and their role in transforming k-space to real space
- Investigate the implications of internal electric fields in p-n junctions
USEFUL FOR
Physicists, materials scientists, and electrical engineers interested in semiconductor physics, particularly those working with band structures and p-n junctions.