Recent content by tritium_3

n0 is thermal equibrium density of electrons p0 is thermal equilibruim density of holes ni = electron density in intrinsic semiconductor Npo is the thermal equilibrium minority carrier density.

right. I was just using the notion commonly used in my textbook. The voltage source is dependent because it depends on the value of Vx. The current source is independent since it provides 100Amps constantly no matter what, after time 0. Using circle as independent, and diamond as dependent...

OK, maybe the title isn't accurate of the circuit, but i listed everything in the circuit. excuse me if it has some other meaning. and also I was trying to add addtional details, saying that there was no mention of stored charge in the inductor. But this problem isn't a tranisent problem...

boron is an acceptor donates 1 hole per atom. Sb is a donor, donates 1 electon per atom 10^16 boron atoms vs 10^15 Sb means that this is a P type. n0p0=ni^2 minority negative charge carriers : Npo=ni^2/p0 = 10^20/10^16 = 10^4 cm^-3 major charge carriers = 10^16

Homework Statement find Vx for all t inductor assumed to have no energy stored [PLAIN]http://img651.imageshack.us/img651/773/circuitgt.jpg Homework Equations inductor v = L di/dt unit step = 1 for t>0, = 0 for t<=0 The Attempt at a Solution using node voltage...