Determining Charge Carrier Concentration from Doping in Si Crystal

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SUMMARY

The silicon crystal is determined to be type "p" due to the higher concentration of boron (1016 cm-3) compared to antimony (1015 cm-3). Boron, as an acceptor, donates one hole per atom, while antimony, as a donor, contributes one electron per atom. The concentration of minority charge carriers (electrons) is calculated using the formula Npo = ni2/p0, resulting in a value of 104 cm-3. The majority charge carriers (holes) in this p-type semiconductor are 1016 cm-3.

PREREQUISITES
  • Understanding of semiconductor doping concepts
  • Knowledge of p-type and n-type semiconductor characteristics
  • Familiarity with charge carrier concentration calculations
  • Basic principles of intrinsic and extrinsic semiconductors
NEXT STEPS
  • Study the calculation of charge carrier concentrations in semiconductors
  • Learn about the properties and applications of p-type and n-type semiconductors
  • Explore the role of doping elements such as boron and antimony in silicon
  • Investigate the intrinsic carrier concentration (ni) in silicon at various temperatures
USEFUL FOR

Electrical engineers, materials scientists, and students studying semiconductor physics will benefit from this discussion, particularly those focusing on doping effects in silicon crystals.

nhrock3
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a silicon crystal is doped with 10^15 cm^-3 atoms of antimony
and its also doped with 10^16 cm^-3 atoms of boron

will the crystal be type p or type n

what will be the concentration of minory charge carriers and majority charge carriers
?

Boron has 3 electrons in outer circle
and Sb has 5 on the outer circle
so its type "p" because there there is more +3 then +5
thats as far as could go
how to find the concentration of minory charge carriers and majority charge carriers
 
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nhrock3 said:
a silicon crystal is doped with 10^15 cm^-3 atoms of antimony
and its also doped with 10^16 cm^-3 atoms of boron

will the crystal be type p or type n

what will be the concentration of minory charge carriers and majority charge carriers
?

Boron has 3 electrons in outer circle
and Sb has 5 on the outer circle
so its type "p" because there there is more +3 then +5
thats as far as could go
how to find the concentration of minory charge carriers and majority charge carriers

But the two doping densities are not the same...
 
boron is an acceptor donates 1 hole per atom.
Sb is a donor, donates 1 electon per atom

10^16 boron atoms vs 10^15 Sb means that this is a P type.

n0p0=ni^2

minority negative charge carriers : Npo=ni^2/p0 = 10^20/10^16 = 10^4 cm^-3

major charge carriers = 10^16
 
what are n0 p0 and ni
?

what N represents in Npo=ni^2/p0 ?
 
n0 is thermal equibrium density of electrons
p0 is thermal equilibruim density of holes

ni = electron density in intrinsic semiconductor

Npo is the thermal equilibrium minority carrier density.
 
how you get that the "major charge carriers = 10^16 "
?
 

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