Double heterostructure junction in forward and zero bias

Click For Summary
SUMMARY

The discussion focuses on the analysis of double heterostructure junctions in semiconductor physics, particularly under forward bias conditions. Key inquiries include the modification of Fermi levels across three regions, the extent and location of band bending changes, and optimal doping strategies for the central region. Participants emphasize the need for resources that provide detailed insights into these phenomena, specifically in the context of semiconductor double heterostructures.

PREREQUISITES
  • Understanding of pn homojunctions and their equilibrium properties
  • Knowledge of semiconductor physics, particularly band theory
  • Familiarity with Fermi level concepts in semiconductor materials
  • Experience with doping techniques in semiconductor fabrication
NEXT STEPS
  • Research "Semiconductor Physics and Devices" by Donald A. Neamen for foundational knowledge
  • Explore "Physics of Semiconductor Heterostructures" for advanced insights on heterostructures
  • Investigate the effects of doping on band structure in "Introduction to Solid State Physics" by Charles Kittel
  • Learn about band bending in semiconductor junctions through academic papers on double heterostructures
USEFUL FOR

Students, researchers, and professionals in semiconductor physics, particularly those focusing on device engineering and heterostructure applications.

EmilyRuck
Messages
134
Reaction score
6
Hi!
When dealing with a pn homojunction, it is easy to see the features it has at equilibrium, and also the features it has with forward/reverse bias. Plots show the constant Fermi level at equilibrium and the different Fermi levels for a forward bias; moreover, examples show how much the bands bending is reduced from an external voltage.
Is it possible to find similar informations for a semiconductor double heterostructure?
In particular, I would like to know, in forward bias:
- how are the Fermi levels modified through all the three regions;
- how much and where is the bands bending modified in the regions;
- what kind of doping it is more convenient for the central region.
Is there a book or a link which can show these features?
Thank you anyway!

Emily
 
I know that my questions were very specific. More simply, do you know some books that talk about heterostructures?
 

Similar threads

Undergrad Diffusion of carriers in a double heterostructure
  • · Replies 4 ·
Replies
4
Views
2K
Undergrad Pn junction to reach thermal equilibrium
  • · Replies 7 ·
Replies
7
Views
3K
Undergrad Built-in potential in pn junction
  • · Replies 2 ·
Replies
2
Views
4K
Graduate Law of the PN junction under forward bias. Valid ?
  • · Replies 2 ·
Replies
2
Views
2K
Graduate About the energy bands, fermi levels in PN junctions?
  • · Replies 2 ·
Replies
2
Views
7K
Graduate Pn junction, diode and energy level of conduction band during forward biasing
  • · Replies 2 ·
Replies
2
Views
3K
Graduate Best way of explaining PN Biasing to a friend?
  • · Replies 1 ·
Replies
1
Views
2K
Graduate [Semiconductor] Aluminum doped Silicon, valance band&holes
  • · Replies 6 ·
Replies
6
Views
4K
Fundamentals of the PN Junction
  • · Replies 12 ·
Replies
12
Views
3K
Graduate Metal-semiconductor junction with p-type and n-type and varying work functions
  • · Replies 4 ·
Replies
4
Views
5K