EmilyRuck
- 134
- 6
Hi!
When dealing with a pn homojunction, it is easy to see the features it has at equilibrium, and also the features it has with forward/reverse bias. Plots show the constant Fermi level at equilibrium and the different Fermi levels for a forward bias; moreover, examples show how much the bands bending is reduced from an external voltage.
Is it possible to find similar informations for a semiconductor double heterostructure?
In particular, I would like to know, in forward bias:
- how are the Fermi levels modified through all the three regions;
- how much and where is the bands bending modified in the regions;
- what kind of doping it is more convenient for the central region.
Is there a book or a link which can show these features?
Thank you anyway!
Emily
When dealing with a pn homojunction, it is easy to see the features it has at equilibrium, and also the features it has with forward/reverse bias. Plots show the constant Fermi level at equilibrium and the different Fermi levels for a forward bias; moreover, examples show how much the bands bending is reduced from an external voltage.
Is it possible to find similar informations for a semiconductor double heterostructure?
In particular, I would like to know, in forward bias:
- how are the Fermi levels modified through all the three regions;
- how much and where is the bands bending modified in the regions;
- what kind of doping it is more convenient for the central region.
Is there a book or a link which can show these features?
Thank you anyway!
Emily