Thermal conductivity - doped silicon

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SUMMARY

The thermal conductivity of boron-doped silicon substrates at room temperature is approximately 147 W/m-K, with variations due to doping being negligible, typically less than 1 W/m-K. This conclusion is supported by calculations referenced in patent US7202146. The thermal conductivity of single crystal silicon is weakly dependent on doping levels, with values ranging from 149-157 W/m-K under normal conditions. For boron concentrations of 8e18 cm-3 and 1.2e15 cm-3, the impact on thermal conductivity remains minimal.

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I 'trying to find the thermal conductivity of a silicon substrate doped with boron with known dopant concentration. Is there any way to calculate it or it has to be measured.

Thanks in advance for any advice.
 
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You may already know this, but the thermal conductivity of single crystal silicon at normal temperatures is only weakly dependent on doping. The dependence is probably less than the measurement error (I typically see values ranging from 149-157 W/m-K). How precise an answer do you need?
 
I want to know the conductivity of doped silicon with boron at room temperature. An estimation would be wright too. I have to different concentrations of boron, one of 8e18 (cm-3) and one of 1,2e15 (cm-3).
Thanks in advance
 
According to the calculations http://www.patentstorm.us/patents/7202146/description.html" (which you may or may not believe), the thermal conductivity at 22°C is 147 W/m-K, and the variation due to boron doping is negligible (<1 W/m-K). This agrees with the idea that electronic thermal conductivity is small compared to lattice thermal conductivity in single crystal silicon around room temperature.
 
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