Topological Insulator: A Zero-Gap Material With SOC?

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mohsen2002
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Hi every one,

I face with a question on my works,
As you know there in many articles Physicist introduce a material that has zero gap without spin-orbit coupling (SOC). By applying the SOC, a relatively small gap (0.1 eV) is opened and it becomes topological insulator.
My question,
Is that possible to have a material that has a large band gap (1 eV) without SOC and it becomes topological insulator with large gap by applying SOC?

Thanks for your answers,
 
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It depends on the value of spin orbit relative to the gap. The reason most TIs contain bismuth or another heavy element is because you need really strong spin orbit.