Wanted: Band Offsets for Quantum Wells

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SUMMARY

The discussion centers on the conduction band offsets for semiconducting quantum wells, specifically GaAs/AlGaAs and CdTe/CdMgTe. Users mention that the band offset for GaAs/AlGaAs is typically a 60/40 split of the energy gap, with values of 0.1 eV and 0.3 eV for AlGaAs. However, there is a lack of definitive data for CdTe/CdMgTe, and the type classification (I or II) remains uncertain. A reference suggested for further information is the work by Cardona and Yu.

PREREQUISITES
  • Understanding of conduction band offsets in semiconductor physics
  • Familiarity with quantum well structures
  • Knowledge of energy band theory
  • Experience with semiconductor materials, specifically GaAs and CdTe
NEXT STEPS
  • Research conduction band offsets in GaAs/AlGaAs using Cardona and Yu's publications
  • Investigate the properties of CdTe/CdMgTe quantum wells
  • Study the classification of quantum wells as type I or II
  • Explore finite square well potential models in semiconductor physics
USEFUL FOR

Researchers, physicists, and engineers working in semiconductor technology, particularly those focused on quantum well structures and band offset calculations.

BeauGeste
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Hi,

Really having a hard time finding conduction band offsets for semiconducting quantum wells - specifically GaAs/AlGaAs and CdTe/CdMgTe. I've heard 0.1 and 0.3 eV for AlGaAs and haven't seen anything on CdTe. Does anybody know of a reference where I could find these tabulated.
Thanks a lot.

btw. by offsets I mean the potential barrier height of the well - i.e. finite square well potential
 
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If memory serves me correctly, the band offset for the GaAs/AlGaAs is a 60/40 split of the energy gap. Not too sure about the other system, in addition, I am not sure if CdTe/CdMgTe is type I or II.

I'd check Cardona and Yu and see where they lead you.
 

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