SUMMARY
The discussion centers on the changes observed in photoresist S1818 after a Reactive Ion Etching (RIE) process using SF6 gas. The resist was hard baked at 125°C for 2 hours before undergoing RIE at 30 mtorr and 45 sccm for 3 minutes. Participants concluded that the color change of the resist does not indicate its removal, but rather could be attributed to factors such as sputtering, increased cross-linking from UV exposure, or incorporation of sulfur or fluorine atoms from the plasma.
PREREQUISITES
- Understanding of Reactive Ion Etching (RIE) processes
- Knowledge of photoresist materials, specifically S1818
- Familiarity with plasma chemistry and its effects on materials
- Experience with thermal processing of photoresists
NEXT STEPS
- Research the effects of sputtering on photoresist thickness
- Learn about the cross-linking mechanisms in photoresists under plasma exposure
- Investigate the chemical interactions of sulfur and fluorine with photoresist materials
- Explore troubleshooting techniques for RIE processes
USEFUL FOR
Material scientists, semiconductor engineers, and professionals involved in photolithography and etching processes who seek to understand the behavior of photoresists during RIE.
