Can you verify these statements?

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Discussion Overview

The discussion revolves around the characteristics and behaviors of MOSFETs and BJTs, particularly focusing on how channel width and length affect gate capacitance and current flow in relation to temperature changes. The scope includes technical explanations and conceptual clarifications regarding semiconductor devices.

Discussion Character

  • Technical explanation
  • Conceptual clarification
  • Debate/contested

Main Points Raised

  • Some participants assert that increased channel width in a MOSFET increases gate capacitance, while increased channel length decreases it.
  • One participant questions the reasoning behind the claim that increasing channel length decreases gate capacitance, suggesting that it may actually increase gate area similarly to channel width.
  • There is a claim that an increase in temperature in a MOSFET leads to an increase in current flow, while in a BJT, it leads to a decrease in current flow.
  • Another participant counters the claim regarding BJTs, stating that VBE declines with temperature, resulting in increased current for a given bias point.
  • It is proposed that the gate capacitance is proportional to the product of channel length and width, indicating that both dimensions affect capacitance similarly.
  • Participants discuss the implications of channel length on drain current and transconductance (gm), emphasizing the significance of the W/L ratio in low-power high-frequency applications.
  • There is an inquiry about the effects of connecting two transistors of different channel lengths, with a suggestion that the outcome may depend on the specific connection method.

Areas of Agreement / Disagreement

Participants express differing views on the relationship between channel length and gate capacitance, as well as the effects of temperature on current flow in BJTs. The discussion remains unresolved regarding these points, with multiple competing perspectives presented.

Contextual Notes

Some claims depend on specific definitions and assumptions about device behavior, and the discussion does not resolve the mathematical relationships or implications of varying channel lengths and widths.

KingNothing
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  1. In a MOSFET, increased channel width acts increases the gate capacitance.
  2. In a MOSFET, increased channel length decreases gate capacitance.
  3. In a MOSFET, an increase in temperature will cause an increase in the current flow.
  4. In a BJT, an increase in temperature will cause a decrease in current flow.
 
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Why do you think increasing the channel length of a MOSFET would decrease the gate capacitance?
 
KingNothing said:
  1. In a MOSFET, increased channel width acts increases the gate capacitance.
  2. In a MOSFET, increased channel length decreases gate capacitance.
  3. In a MOSFET, an increase in temperature will cause an increase in the current flow.
  4. In a BJT, an increase in temperature will cause a decrease in current flow.

1. Yes
2. No. Increasing channel length increases gate area just like increasing channel width.
3. Yes.
4. No. VBE declines with temp so current increases for a given bias point.
 
carlgrace said:
2. No. Increasing channel length increases gate area just like increasing channel width.
4. No. VBE declines with temp so current increases for a given bias point.

Thanks carl! Could you elaborate on what effect different channel lengths have?
 
KingNothing said:
Thanks carl! Could you elaborate on what effect different channel lengths have?

No prob. The gate capacitance is proportional to the product of the length and width. The area is what makes the gate cap. So, as gate far as capacitance is concerned, length has exactly the same effect as width. Different channel lengths affect the drain current and gm of the device (the key term is W/L).
 
So, for low-power high-frequency applications, one would set the W/L ratio as appropriate, then minimize them both. Correct?

Does connecting two transistors of different channel lengths produce any interesting effects?
 
KingNothing said:
So, for low-power high-frequency applications, one would set the W/L ratio as appropriate, then minimize them both. Correct?

Does connecting two transistors of different channel lengths produce any interesting effects?

That's true in general. Sometimes other considerations come into play, though, such as noise or output impedance, but generally you're right.

As for the connection of two devices, it depends on how they are connected. People vary channel lengths for different reasons all the time.
 

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