Contradiction in Common BJT Configuration: KVL vs Early Effect

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SUMMARY

The discussion centers on the apparent contradiction between Kirchhoff's Voltage Law (KVL) and the Early Effect in Bipolar Junction Transistors (BJTs) under common base configuration. Participants clarify that while KVL states VBB = VBE + IE*RB with VBB and RB as constants, the Early Effect causes an increase in collector current (Ic) and subsequently affects emitter current (Ie). It is established that VBE is not strictly constant, and slight variations in VBE are necessary to accommodate changes in Ie, thus resolving the contradiction without violating KVL.

PREREQUISITES
  • Understanding of Bipolar Junction Transistor (BJT) configurations
  • Familiarity with Kirchhoff's Voltage Law (KVL)
  • Knowledge of the Early Effect in BJTs
  • Basic principles of semiconductor physics and diode equations
NEXT STEPS
  • Study the Early Effect in BJTs and its impact on collector current
  • Explore the Ebers-Moll model with Early corrections for BJTs
  • Learn about the diode equation and its application in transistor circuits
  • Investigate the relationship between VBE, IE, and RB in BJT operation
USEFUL FOR

Electrical engineers, electronics students, and anyone involved in the design and analysis of BJT circuits, particularly those focusing on transistor behavior under varying conditions.

sahil_time
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Now as you can see in the picture a common base configuration of BJT.
The green markings in the picture are resistances. :p
My question is:
By KVL : VBB = VBE + IE*RB which means that IE is esentially a constant because
VBB , VBE, RB are constants.
Now If Voltage Vcb is increased Early effect states that depletion region
of CB junction penetrates deeper into the Base region. Which means charge gradient in base increases and hence IE increases .

What is the contradiction?
 

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There's no contradiction. Vbe isn't strictly constant. At constant current base, every BJT will show increasing colector current when Vce grows. Check any curve.
 
Yes, but if at all IE increases, it would imply that VBE has increased. That will not fit
the KVL equation.

?
 
You need a higher Vbe (but very little) to increase Ie. It's the PN junction law. Perhaps you believe Vbe NEVER changes no matter the value of Ie. That's wrong.
 
No i do believe. But what my question is that the KVL eqn says:
VBB = VBE + IE*RB
Do you agree that VBB and RB are constants?
IE=function of VBE
Now if VBE and IE were to simultaneously increase it would violate KVL.


?
 
Gordianus said:
You need a higher Vbe (but very little) to increase Ie. It's the PN junction law. Perhaps you believe Vbe NEVER changes no matter the value of Ie. That's wrong.

No i do believe. But what my question is that the KVL eqn says:
VBB = VBE + IE*RB
Do you agree that VBB and RB are constants?
IE=function of VBE
Now if VBE and IE were to simultaneously increase it would violate KVL.


?
 
Hmm... trying my take on this.

I don't think there's a catastrophe. Early effect increases Ic (not Ie) and increases the forward gain. One expects Ie to increase with an increase on Ic, but let's see. Ebers-Moll with Early corrections has for Ie

Ie = i(Vbe)(a + 1/(Bf.a)) - a.i(-Vcb)
i(Vx) = Is . ( exp( Vx/Vt ) - 1 )
a = ( 1 + Vce/Va )

i(-Vcb) is very small in forward active mode, so

Ie = i(Vbe)(a + 1/(Bf.a))

Now, Vee = Vbe + Re . Ie, so we get

Vee = Vbe + Re.i(Vbe).(a+1/(Bf.a))

This is identical to good old diode equation

Vee = Vbe + Re*.i(Vbe)

where Re* = Re.a(1 + 1/(Bf.a2))

Therefore, the effect on Ie is the same as if Re increased by a factor "a" (plus a much smaller 2nd order factor)... so Ie should decrease, and because of the diode equation Vbe should decrease a tiny little bit too (albeit it will remain pretty much around 0.6-0.7).

At least that's my take.
 
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