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Crystal Growth - Czochralski technique, finding concen. of dopant after growth

  1. Jan 13, 2012 #1
    1. The problem statement, all variables and given/known data
    A doped silicon ingot is to be grown by the Czochralski technique with a dopant concentration of 1016boron atoms/cm3. If k0 = 0.9 for boron/Si, what concentration of boron atoms should be in the melt?

    2. Relevant equations
    Cs/C0 = k0 (1 - m/m0) k0-1

    k0 = Cs / Cl

    3. The attempt at a solution
    I think it's just a case of subbing in the numbers to establish Cs and then using this in the second equation to find Cl, but I'm really confused about what the values of M and M0 should be in this scenario.
     
  2. jcsd
  3. Jan 14, 2012 #2

    Redbelly98

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    To be honest, I'm not familiar with this topic but I see that your question has gone unanswered for nearly 1-1/2 days so I'll see what I can do to help.

    What do the m and m0 in the equation represent? Wherever you got that equation from, there should be definitions of all the terms in it.

    Also, is this question from a Physics class or an Engineering class? If it belongs in the Engineering homework area, I could move your post there where people more knowledgeable about it are more likely to see it.
     
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