Finding the Early voltage from the 2N5551 datasheet

[gnurf]

Is it possible to find the Early voltage (V_A) of the 2N5551 based on the information in the datasheet? As it happens, I see that the SPICE model in the datasheet lists this parameter at 100V, but that bypasses the purpose of the question. Thanks.

 

[Jony130]

You need to find the datasheet that show hoe.
Knowing hoe we can without difficulty determine Early voltage.
See this datasheet as a example
http://www.datasheetcatalog.org/datasheet/SGSThomsonMicroelectronics/mXyzzyw.pdf

Va = (Ic/hoe) - Vce = (1mA/5uS) - 10V = 200V - 10V = 190V

But as you can see we have a large manufacture spread. So in practice, if we don't know the exact value we assume a type value Va = 100V

 

[gnurf]

Yes, but unfortunately I can't find this hoe in the datasheet.

 

[Jony130]

Yes, but unfortunately I can't find this hoe in the datasheet.

This is normal.
Why do you need to know Va voltage?

 

[fbs7]

Hmm... in the graphic of forward gain x collector current... the increase in forward gain in small signals is due to Early effect... should be able to get it from there, shouldn't it?

hf = hfo ( 1 + Vce/Va)

if one matches hf vs Ic, and Ic vs Vce... that should give Va...?

 

[gnurf]

Why do you need to know Va voltage?

In my book, the Early effect is modeled as a resistor, r_o, between the collector and emitter:

r_o = (V_A +V_CE)/I_C

I'm trying to find this value for a simple CE stage based on the 2N5551.

 

[yungman]

Not with this data sheet. Look for another brand that has the Ic vs Vce curve. If you cut the graph and stick on a piece of paper with a lot of room on the left side, then extend the straight portion towards the left, they all should meet at Ic=0 at one point and that's the early voltage Va.

If it is a common transistor, there should be plenty of manufacturers. I notice different manufacturer give different information.

And other way if you have good meter, measure it yourself. Set up a bias condition with grounded emitter, then vary the collector voltage and read the current. This is hard as the change are very small. But it's doable.

 

[Jony130]

But do you know that
hoe = 1/ro
Also when load resistance (Rc||RL) of a CE stage is not such a larger we can ignore ro effect on the voltage gain.

 

[yungman]

Problem is data sheet of normal small signal BJT don't give you the h parameters, only β. Only the RF transistors that give you s-parameters, then you can do transformation.

Also the output impedance of a transistor is not ro alone as hoe is measure with ib=0. The collector curves are drawn with ib not equal to zero. It depend on the collector current.