Investigating SEU in a Silicon Component Irradiation

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SUMMARY

The discussion focuses on the investigation of Single-Event Upsets (SEU) in silicon components subjected to irradiation by an oxygen ion beam. The critical energy for producing an electron/hole pair in silicon is established at 3.6 eV, while the maximum energy for observed SEUs is 10 MeV/nucleon. Participants analyze the linear energy transfer (LET) values, with the LET threshold (LETTh) noted at 0.85, and discrepancies in readings from provided diagrams are discussed. The calculated energy deposition (Ec) is determined to be 0.391 MeV based on the parameters provided.

PREREQUISITES
  • Understanding of Single-Event Upsets (SEU) in semiconductor devices
  • Familiarity with linear energy transfer (LET) concepts
  • Knowledge of silicon properties, including density (ρSi)
  • Basic grasp of energy calculations in particle physics
NEXT STEPS
  • Research the effects of ion beam irradiation on semiconductor reliability
  • Study the calculation methods for linear energy transfer (LET) in different materials
  • Explore the implications of SEU on electronic device performance
  • Investigate advanced modeling techniques for radiation effects in silicon components
USEFUL FOR

This discussion is beneficial for physicists, electrical engineers, and researchers involved in semiconductor technology, particularly those focusing on radiation effects and reliability of electronic components.

Firben
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Homework Statement


[/B]
A silicon component is irradiated in an accelerator. The oxygen ion beam is pointed in the direction of the shortest dimension of the sensitive volume of the device. The energy required for producing an electron/hole pair in silicon is 3.6 eV. It is found that the highest energy for which SEU (Single-Event Upsets or “soft errors”) is observed is 10 MeV/nucleon. Assume that the shortest dimension of the sensitive volume is 2 µm and that ion energies do not change during traveling.

Homework Equations



Ec = ρSi*d*LETm,th

Figure:
http://s716.photobucket.com/user/Pitoraq/media/LET_zpsqdevvbpw.png.html

The Attempt at a Solution



ρSi = 2.33 g/cm^2
d = 2μm

I have trouble to read of the diagram of what LETTh is. If the energy is 10 Mev and if i draw a straight line upward i got the value of 10^0 or 1 LET (Mev * cm^2/mg). In the solution manual the LETTh value is 0.85 why ?

Ec = 2.33*0.0002*0.9/10^-3 = 0.391 Mev
[/B]
 
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Firben said:
I have trouble to read of the diagram of what LETTh is. If the energy is 10 Mev and if i draw a straight line upward i got the value of 10^0 or 1 LET (Mev * cm^2/mg).
I get a smaller value, even a bit below 0.85.
 
Using your pixel values for the positions, I get about 0.87. I put it one pixel lower which gave 0.82. It is a log scale, so 15% difference is not much.
 

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